Method of manufacturing transmission line using nanostructure material formed by electro-spinning

ABSTRACT

Disclosed is a method of manufacturing a transmission line using a nanostructured material. The method includes locating a first insulating layer above a first nanoflon layer including nanoflon, forming a first conductive layer above the first insulating layer, forming a first pattern, which transmits and receives a signal, by etching the first conductive layer, and locating a first ground layer below the first nanoflon layer. Here, the nanoflon is a nanostructured material formed by electrospinning a liquid resin at a high voltage.

CROSS-REFERENCE TO RELATED APPLICATION

This application claims priority to and the benefit of Korean PatentApplication No. 2018-0103923, filed on Aug. 31, 2018, the disclosure ofwhich is incorporated herein by reference in its entirety.

FIELD

The present invention relates to a transmission line, and moreparticularly, to a method of manufacturing a transmission line using ananostructured material formed by electrospinning a liquid resin at ahigh voltage.

BACKGROUND

In order to transmit or treat a superhigh frequency signal at a lowloss, a low-loss and high performance transmission line is necessary.Generally, losses at a transmission line are roughly divided into aconductor loss caused by a metal and a dielectric loss caused by adielectric. Particularly, a loss caused by dielectric increases whenpermittivity of a dielectric is higher, and a power loss increases whenresistance is greater.

Accordingly, in order to manufacture a low-loss and high performancetransmission line for transmitting a superhigh frequency signal, it isnecessary to use a material having low permittivity and a small losstangent. Particularly, in order to efficiently transmit signals havingfrequencies in bands of 3.5 GHz and 28 GHz used in 5G mobilecommunication network, the significance of a transmission line and anantenna which have a low loss even in a superhigh frequency bandincreases more and more.

SUMMARY

The present invention is directed to providing a method of manufacturinga transmission line using a nanostructured material formed byelectrospinning, which has low permittivity and is capable of reducing aloss tangent value at the low permittivity to reduce a loss at atransmission line caused by a dielectric to satisfy necessity for alow-loss and high performance transmission line.

According to an aspect of the present invention, there is provided amethod of manufacturing a transmission line using a nanostructuredmaterial formed through electrospinning. The method includes locating afirst insulating layer above a first nanoflon layer including nanoflon,forming a first conductive layer above the first insulating layer,forming a first pattern, which transmits and receives a signal, byetching the first conductive layer, and locating a first ground layerbelow the first nanoflon layer. Here, the nanoflon is a nanostructuredmaterial formed by electrospinning a liquid resin at a high voltage.

According to another aspect of the present invention, there is provideda method of manufacturing a transmission line using a nanostructuredmaterial formed through electrospinning. The method includes forming afirst conductive layer on a first insulating layer, locating the firstinsulating layer above a first nanoflon layer including nanoflon,forming a first pattern, which transmits and receives a signal, byetching the first conductive layer, and locating a first ground layerbelow the first nanoflon layer. Here, the nanoflon is a nanostructuredmaterial formed by electrospinning a liquid resin at a high voltage.

The forming of the first pattern may include forming a ground line and asignal line by etching the first conductive layer.

The method may further include locating a second nanoflon layer on thefirst pattern formed on the first insulating layer and the firstinsulating layer exposed by the etching and locating a second groundlayer on the second nanoflon layer.

The method may further include locating a second nanoflon layer on thefirst pattern formed on the first insulating layer and the firstinsulating layer exposed by the etching, locating a second ground layeron the second nanoflon layer, locating a third nanoflon layer on thesecond ground layer, locating a second insulating layer on the thirdnanoflon layer, forming a second conductive layer on the secondinsulating layer, and forming a second pattern, which transmits andreceives a signal, by etching the second conductive layer.

The forming of the second pattern may include forming atransmission-signal line and a ground terminal by etching the secondconductive layer.

The method may further include locating a fourth nanoflon layer on thesecond pattern formed on the second insulating layer and the secondinsulating layer exposed by the etching and locating a third groundlayer on the fourth nanoflon layer.

The locating may be performed through adhesion using an adhesive tape oran adhesive or using thermal adhesion in which heat is applied to anadhesive tape.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other objects, features and advantages of the presentinvention will become more apparent to those of ordinary skill in theart by describing exemplary embodiments thereof in detail with referenceto the accompanying drawings, in which:

FIG. 1 illustrates an example of an apparatus which manufacturesnanoflon through electrospinning;

FIG. 2 illustrates an example of a stripline transmission line;

FIG. 3 is a cross-sectional view illustrating a first embodiment of atransmission line manufactured using a transmission line manufacturingmethod according to the present invention;

FIG. 4 is a cross-sectional view of the transmission line whichillustrates adhesion to a first nanoflon layer according to thetransmission line manufacturing method according to the presentinvention;

FIG. 5 is a cross-sectional view illustrating a second embodiment of thetransmission line manufactured using the transmission line manufacturingmethod according to the present invention;

FIG. 6 is a cross-sectional view illustrating a third embodiment of thetransmission line manufactured using the transmission line manufacturingmethod according to the present invention;

FIG. 7 is a cross-sectional view of the transmission line whichillustrates adhesion to a second nanoflon layer 610 according to thetransmission line manufacturing method according to the presentinvention;

FIG. 8 is a cross-sectional view illustrating a fourth embodiment of thetransmission line manufactured using the transmission line manufacturingmethod according to the present invention;

FIG. 9 is a cross-sectional view illustrating a fifth embodiment of thetransmission line manufactured using the transmission line manufacturingmethod according to the present invention;

FIG. 10 is a cross-sectional view illustrating a sixth embodiment of thetransmission line manufactured using the transmission line manufacturingmethod according to the present invention;

FIGS. 11A and 11B illustrates a first embodiment of a method ofmanufacturing a transmission line using a nanostructured material formedby electrospinning according to the present invention;

FIG. 12 illustrates a second embodiment of the method of manufacturingthe transmission line using the nanostructured material formed byelectrospinning according to the present invention;

FIGS. 13A 13B and 13C illustrates a third embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention;

FIG. 14 illustrates a fourth embodiment of the method of manufacturingthe transmission line using the nanostructured material formed byelectrospinning according to the present invention;

FIGS. 15A and 15B illustrates a fifth embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention;

FIGS. 16A and 16B illustrates a sixth embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention;

FIGS. 17A, 17B, and 17C illustrate a seventh embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention;

FIGS. 18A, 18B, 18C, and 18D illustrate an eighth embodiment of themethod of manufacturing the transmission line using the nanostructuredmaterial formed by electrospinning according to the present invention;

FIGS. 19A and 19B illustrate a ninth embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention; and

FIGS. 20A and 20B illustrate a tenth embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention.

DETAILED DESCRIPTION

Hereinafter, exemplary embodiments of the present invention will bedescribed in detail with reference to the attached drawings. Sinceembodiments disclosed in the specification and components shown in thedrawings are merely exemplary embodiments of the present invention anddo not represent an entirety of the technical concept of the presentinvention, it should be understood that a variety of equivalents andmodifications capable of substituting the embodiments and the componentsmay be present at the time of filing of the present application.

First, a nanostructured material used in a transmission line using ananostructured material according to the present invention will bedescribed. The nanostructured material refers to a material formed byelectrospinning a liquid resin at a high voltage and will be referred toas nanoflon herein. FIG. 1 illustrates an example of an apparatus whichmanufactures nanoflon through electrospinning. When a polymer solutionincluding polymers is injected into an injector and a high voltage isapplied to and the polymer solution flows at a certain speed intobetween the injector and a substrate on which spinning is performed, aselectricity is applied to a liquid suspended from an end of a capillarytube due to surface tension, a nano-sized thread is formed, and as timepasses, non-woven nanofibers, which are a nanostructured material, areaccumulated. A material formed by accumulating nanofibers as describedabove is nanoflon. As the polymer material used for electrospinning, forexample, there are polyurethane (PU), polyvinylidine diflouride (PVDF),nylon (polyamide), polyacrylonitrile (PAN), and the like. Nanoflon maybe used as a dielectric of a transmission line due to low permittivityand a large amount of air.

FIG. 2 illustrates an example of a stripline transmission line 200.Referring to FIG. 2, the stripline transmission line 200 may include asignal line 210 which transmits a signal, a dielectric 220 whichsurrounds the signal line 210, and a conductor 230 which functions as anouter shield.

FIG. 3 is a cross-sectional view illustrating a first embodiment of atransmission line manufactured using a transmission line manufacturingmethod according to the present invention. Referring to FIG. 3, thefirst embodiment with respect to the transmission line using thenanostructured material according to the present invention includes afirst nanoflon layer 310, a first insulating layer 320, a first pattern340, and a first ground layer 350. The first nanoflon layer 310 includesnanoflon. In the first insulating layer 320, an insulating material islocated above the first nanoflon layer 310, and for example, may belocated through adhesion. The insulating material is a material capableof preventing an etching solution from being absorbed, and for example,polyimide (PI) which is an organic polymer compound may be usedthermally durable plastic.

The first pattern 340 may be formed by etching the first conductivelayer 330 formed on the first insulating layer 320 and functions as atransmission line through which a signal is transmitted. Also, the firstground layer 350 may be located below the first nanoflon layer 310, andfor example, may be located by adhesion.

The adhesion to the first nanoflon layer 310 may be performed using anadhesive tape, an adhesive, or thermal adhesion in which heat is appliedto an adhesive tape.

FIG. 4 is a cross-sectional view of the transmission line whichillustrates adhesion to the first nanoflon layer 310 according to thetransmission line manufacturing method according to the presentinvention. Reference numeral 410 indicates adhesion between a firstnanoflon layer 410 and a first insulating layer 420, and referencenumeral 420 indicates adhesion between the first nanoflon layer 310 andthe first ground layer 350.

FIG. 5 is a cross-sectional view illustrating a second embodiment of thetransmission line manufactured using the transmission line manufacturingmethod according to the present invention. Referring to FIG. 5, in thesecond embodiment with respect to the transmission line manufacturedaccording to the present invention, when the first pattern 340 of thefirst embodiment of the transmission line using the nanostructuredmaterial according to the present invention is formed, ground lines 510and 520 are further formed and the first pattern 340 is used as a signalline. That is, the ground lines 510 and 520 and a signal line 530 areformed by etching the first conductor layer 330.

FIG. 6 is a cross-sectional view illustrating a third embodiment of thetransmission line manufactured using the transmission line manufacturingmethod according to the present invention. Referring to FIG. 6, thethird embodiment with respect to the transmission line manufacturedaccording to the manufacturing method of the present invention furtherincludes a second nanoflon layer 610 and a second ground layer 620 inaddition to the first embodiment (refer to FIG. 3) of the transmissionline manufactured using the manufacturing method of the presentinvention.

The second nanoflon layer 610 may be located above the first pattern 340formed on the first insulating layer 320 and the first insulating layer320 exposed by the etching, and may be located through adhesion. Thesecond ground layer 620 may be located above the second nanoflon layerand may be located through adhesion. The adhesion to the second nanoflonlayer 610 may be performed using an adhesive tape, an adhesive, orthermal adhesion in which heat is applied to an adhesive tape.

FIG. 7 is a cross-sectional view of the transmission line whichillustrates adhesion to the second nanoflon layer 610 according to thetransmission line manufacturing method according to the presentinvention. Reference numeral 710 indicates adhesion between the secondnanoflon layer 610 and the first insulating layer 320 and the firstpattern 340, and reference numeral 720 indicates adhesion between thesecond nanoflon layer 610 and the second ground layer 620.

FIG. 8 is a cross-sectional view illustrating a fourth embodiment of atransmission line manufactured using a nanostructured material formed byelectrospinning according to a transmission line manufacturing method ofthe present invention. Referring to FIG. 8, the fourth embodiment withrespect to the transmission line using the nanostructured materialaccording to the present invention includes a third nanoflon layer 810,a second insulating layer 820, and a second pattern 840 in addition tothe third embodiment (refer to FIG. 6) of the transmission line usingthe nanostructured material according to the present invention. Thethird nanoflon layer 810 may be located above the second ground layer620 and may be located through adhesion. The second insulating layer 820may be located above the third nanoflon layer 810 and may be locatedthrough adhesion. The second pattern 840 may be formed by etching asecond conductive layer 830 formed above the second insulating layer 820and is used as a signal line which transmits a signal. The adhesion tothe third nanoflon layer 810 may be performed using an adhesive tape, anadhesive, or thermal adhesion in which heat is applied to an adhesivetape.

FIG. 9 is a cross-sectional view illustrating a fifth embodiment of thetransmission line manufactured using the nanostructured material formedby electrospinning according to the transmission line manufacturingmethod of the present invention. Referring to FIG. 9, in the fifthembodiment with respect to the transmission line using thenanostructured material according to the present invention, when thefourth embodiment of the transmission line using the nanostructuredmaterial according to the present invention is formed, ground lines 910and 920 are further formed and the second pattern 930 is used as asignal line. That is, the ground lines 910 and 920 and a signal line 930are formed by etching the first conductor layer 830.

FIG. 10 is a cross-sectional view illustrating a sixth embodiment of thetransmission line manufactured using the nanostructured material formedby electrospinning according to the transmission line manufacturingmethod of the present invention. Referring to FIG. 10, the sixthembodiment with respect to the transmission line using thenanostructured material according to the present invention includes afourth nanoflon layer 1010 and a third ground layer 1020 in addition tothe fourth embodiment (refer to FIG. 8) of the transmission line usingthe nanostructured material according to the present invention.

The fourth nanoflon layer 1010 may be located above the second pattern840 formed on the second insulating layer 820 and the second insulatinglayer 820 exposed by the etching, and may be located through adhesion.The third ground layer 1020 may be located above the fourth nanoflonlayer 1010 and may be located through adhesion. The adhesion to thefourth nanoflon layer 1010 may be performed using an adhesive tape, anadhesive, or thermal adhesion in which heat is applied to an adhesivetape.

FIG. 11 illustrates a first embodiment of a method of manufacturing atransmission line using a nanostructured material formed byelectrospinning according to the present invention. Referring to FIG.11(A), a first insulating layer 1120 is located above a first nanoflonlayer 1110 formed of nanoflon. For example, the first insulating layer1120 may be located above the first nanoflon layer 1110 using anadhesive tape or adhesive to the first nanoflon layer 1110 or throughthermal adhesion in which heat is applied to an adhesive tape. A firstconductive layer 1130 is formed above the first insulating layer 1120.

Referring to FIG. 11(B), a first pattern 1140, which transmits andreceives a signal, is formed by etching the first conductor layer 1130.A first ground layer is located below the first nanoflon layer 1110. Forexample, a first ground layer 1150 may be located below the firstnanoflon layer 1110 using an adhesive tape or an adhesive or throughthermal adhesion, in which heat is applied to an adhesive tape, to abottom of the first nanoflon layer 1110.

FIG. 12 illustrates a second embodiment of the method of manufacturingthe transmission line using the nanostructured material formed byelectrospinning according to the present invention. Referring to FIG.12, in the second embodiment with respect to the method of manufacturingthe transmission line using the nanostructured material according to thepresent invention, when the first embodiment of the method ofmanufacturing the transmission line using the nanostructured materialaccording to the present invention is formed as shown in FIG. 11(B),ground lines 1210 and 1220 are further formed and the first pattern 1230is used as a signal line. That is, the ground lines 1210 and 1220 and asignal line 1230 may be formed by etching the first conductor layer1130.

FIG. 13 illustrates a third embodiment of the method of manufacturingthe transmission line using the nanostructured material formed byelectrospinning according to the present invention. First, an insulatingconductive article 13, in which the first conductive layer 1130 isformed above the first insulating layer 1120, is prepared. Theinsulating conductive article 13 is located above the first nanoflonlayer 1110.

A first pattern 1310, which transmits and receives a signal, is formedby locating the insulating conductive article 13 above the firstnanoflon layer 1110 and then etching the first conductive layer 1130.The first ground layer 1150 is located below the first nanoflon layer1110.

The insulating conductive article 13 may be located above the firstnanoflon layer 1110 and the first ground layer 1150 may be located belowthe first nanoflon layer 1110 through adhesion 1115 and 1155, forexample, using an adhesive tape or an adhesive or through thermaladhesion, in which heat is applied to an adhesive tape, to the firstnanoflon layer 1110.

FIG. 14 illustrates a fourth embodiment of the method of manufacturingthe transmission line using the nanostructured material formed byelectrospinning according to the present invention. Referring to FIG.14, in the fourth embodiment with respect to the method of manufacturingthe transmission line using the nanostructured material according to thepresent invention, when the third embodiment of the method ofmanufacturing the transmission line using the nanostructured materialaccording to the present invention is formed as shown in FIG. 13(C),ground lines 1410 and 1420 are further formed and the first pattern 1430is used as a signal line. That is, the ground lines 1410 and 1420 and asignal line 1430 may be formed by etching the first conductor layer1130.

FIG. 15 illustrates a fifth embodiment of the method of manufacturingthe transmission line using the nanostructured material formed byelectrospinning according to the present invention. FIG. 15(A)illustrates the first embodiment, shown in FIG. 11(B), with respect tothe method of manufacturing the transmission line using thenanostructured material according to the present invention. As shown inFIG. 15(B), a second nanoflon layer 1510 is located on a result of thefirst embodiment of the method of manufacturing the transmission line.For example, the second nanoflon layer 1510 may adhere (1525) to thefirst pattern 1140 formed on the first insulating layer 1120 and thefirst insulating layer 1120 exposed by etching in the first embodimentof the method of manufacturing the transmission line. Also, a secondground layer 1520 may be located above the second nanoflon layer 1510.The second ground layer 1520 may be located above the second nanoflonlayer 1510 through adhesion 1515. The adhesion 1515 or 1525 may beperformed using an adhesive or an adhesive or through thermal adhesionin which heat is applied to an adhesive tape.

FIG. 16 illustrates a sixth embodiment of the method of manufacturingthe transmission line using the nanostructured material formed byelectrospinning according to the present invention. Also, FIG. 16(A)illustrates the third embodiment, shown in FIG. 13(C), with respect tothe method of manufacturing the transmission line using thenanostructured material according to the present invention. As shown inFIG. 16(B), a second nanoflon layer 1610 is located on a result of thethird embodiment of the method of manufacturing the transmission line.For example, the second nanoflon layer 1610 may adhere (1615) to thefirst pattern 1310 formed on the first insulating layer 1120 and thefirst insulating layer 1120 exposed by etching in the third embodimentof the method of manufacturing the transmission line. Also, a secondground layer 1620 may be located above the second nanoflon layer 1610.The second ground layer 1620 may be located above the second nanoflonlayer 1610 through adhesion 1625. The adhesion 1615 or 1625 may beperformed using an adhesive or an adhesive or through thermal adhesionin which heat is applied to an adhesive tape.

FIGS. 17A, 17B, and 17C illustrate a seventh embodiment of the method ofmanufacturing the transmission line using the nanostructured materialaccording to the present invention; As shown in FIG. 17C, a secondnanoflon layer 1710 is located on a result of the second embodiment ofthe method of manufacturing the transmission line according to thepresent invention as shown in FIG. 17A or a result of the fourthembodiment shown in FIG. 17B, and a second ground layer 1720 is locatedabove the second nanoflon layer 1710. The second nanoflon layer 1710 maybe located on the ground lines 1210 and 1220 or 1410 and 1420 and thefirst insulating layer 1120 and the second ground layer 1720 may belocated on the second nanoflon layer 1710 through adhesions 1715 and1725.

FIGS. 18A, 18B, 18C, and 18D illustrate an eighth embodiment of themethod of manufacturing the transmission line using the nanostructuredmaterial formed by electrospinning according to the present invention.FIG. 18A illustrates a result of the fifth embodiment of the method ofmanufacturing the transmission line according to the present inventionwhich is shown in FIG. 15B. FIG. 18B illustrates a result of the sixthembodiment of the method of manufacturing the transmission lineaccording to the present invention which is shown in FIG. 16B. Referringto FIG. 18C, a third nanoflon layer 1810 is located on the result of thefifth embodiment of the method of manufacturing the transmission lineaccording to the present invention as shown in FIG. 18A or the result ofthe sixth embodiment of the method of manufacturing the transmissionline according to the present invention as shown in FIG. 18B and then asecond insulating layer 1820 is located above the third nanoflon layer1810.

Referring to FIG. 18D, a second conductive layer 1830 is formed abovethe second insulating layer 1820, and then a second pattern 1840, whichis a signal line, is formed by etching the second conductive layer 1830.The second ground layers 1520 and 1620 and the second insulating layer1820 which come into contact with the third nanoflon layer 1810 mayadhere (1815 and 1825) to each other using an adhesive tape or anadhesive or through thermal adhesion in which heat is applied to anadhesive tape.

FIGS. 19A and 19B illustrate a ninth embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention. FIG. 19Arelates to FIG. 18C and illustrates forming the second conductive layer1830 on the second insulating layer 1820 in the eighth embodiment of themethod of manufacturing the transmission line according to the presentinvention. Referring to FIG. 19B, the eighth embodiment of the method ofmanufacturing the transmission line according to the present inventionis formed as shown in FIG. 19A, and then a transmission-signal line 1930and ground lines 1910 and 1920 are formed by etching the secondconductive layer 1830. The second ground layers 1520 and 1620 and thesecond insulating layer 1820 which come into contact with the thirdnanoflon layer 1810 may adhere (1815 and 1825) to each other using anadhesive tape or an adhesive or through thermal adhesion in which heatis applied to an adhesive tape.

FIGS. 20A and 20B illustrate a tenth embodiment of the method ofmanufacturing the transmission line using the nanostructured materialformed by electrospinning according to the present invention. FIG. 20Arelates to FIG. 18D and illustrates a result of the eighth embodiment ofthe method of manufacturing the transmission line using thenanostructured material according to the present invention.

Referring to FIG. 20B, a fourth nanoflon layer 2010 is located on thesecond pattern 1840 formed in the eighth embodiment of the method ofmanufacturing the transmission line and the second insulating layer 1820exposed by etching, and then a third ground layer 2020 is formed on thefourth nanoflon layer 2010. Here, the fourth nanoflon layer 2010 may belocated on the second pattern 1840 and the second insulating layer 1820exposed by etching through adhesions 2015 and 2025 using an adhesivetape or an adhesive or through thermal adhesion in which heat is appliedto an adhesive tape.

According to the embodiments of the present invention, in a method ofmanufacturing a transmission line using a nanostructured material, ananostructured material formed by electrospinning a resin at a highvoltage is used as a dielectric of a transmission line such that thepermittivity of the dielectric, as the transmission line, may be low anda loss tangent value may be reduced at the low permittivity.

Particularly, a transmission line manufactured according to the methodof manufacturing the transmission line according to the embodiments ofthe present invention may be used as a low-loss flat cable for reducinga transmission loss of a high frequency signal in a band from 3.5 GHzand 28 GHz used in a five generation (5G) mobile communication network.

Although the present invention has been described with reference to theembodiments shown in the drawings, it should be understood that theembodiments are merely examples and a variety of modifications andequivalents thereof may be made by one of ordinary skill in the art.Therefore, the technical scope of the present invention should bedefined by the technical concept of the attached claims.

1. A method of manufacturing a transmission line using a nanostructuredmaterial formed through electrospinning, the method comprising: locatinga first insulating layer above a first nanoflon layer includingnanoflon; forming a first conductive layer above the first insulatinglayer; forming a first pattern, which transmits and receives a signal,by etching the first conductive layer; and locating a first ground layerbelow the first nanoflon layer, wherein the nanoflon is a nanostructuredmaterial formed by electrospinning a liquid resin at a high voltage. 2.A method of manufacturing a transmission line using a nanostructuredmaterial formed through electrospinning, the method comprising: forminga first conductive layer on a first insulating layer; locating the firstinsulating layer above a first nanoflon layer including nanoflon;forming a first pattern, which transmits and receives a signal, byetching the first conductive layer; and locating a first ground layerbelow the first nanoflon layer, wherein the nanoflon is a nanostructuredmaterial formed by electrospinning a liquid resin at a high voltage. 3.The method according to claim 1, wherein the forming of the firstpattern comprises forming a ground line and a signal line by etching thefirst conductive layer.
 4. The method according to claim 1, furthercomprising: locating a second nanoflon layer on the first pattern formedon the first insulating layer and the first insulating layer exposed bythe etching; and locating a second ground layer on the second nanoflonlayer.
 5. The method according to claim 1, further comprising: locatinga second nanoflon layer on the first pattern formed on the firstinsulating layer and the first insulating layer exposed by the etching;locating a second ground layer on the second nanoflon layer; locating athird nanoflon layer on the second ground layer; locating a secondinsulating layer on the third nanoflon layer; forming a secondconductive layer on the second insulating layer; and forming a secondpattern, which transmits and receives a signal, by etching the secondconductive layer.
 6. The method of claim 5, wherein the forming of thesecond pattern comprises forming a transmission-signal line and a groundterminal by etching the second conductive layer.
 7. The method of claim5, further comprising: locating a fourth nanoflon layer on the secondpattern formed on the second insulating layer and the second insulatinglayer exposed by the etching; and locating a third ground layer on thefourth nanoflon layer.
 8. The method according to claim 1, wherein thelocating is performed through adhesion using an adhesive tape or anadhesive or using thermal adhesion in which heat is applied to anadhesive tape.
 9. The method according to claim 2, wherein the locatingis performed through adhesion using an adhesive tape or an adhesive orusing thermal adhesion in which heat is applied to an adhesive tape. 10.The method according to claim 4, wherein the locating is performedthrough adhesion using an adhesive tape or an adhesive or using thermaladhesion in which heat is applied to an adhesive tape.
 11. The methodaccording to claim 5, wherein the locating is performed through adhesionusing an adhesive tape or an adhesive or using thermal adhesion in whichheat is applied to an adhesive tape.
 12. The method according to claim7, wherein the locating is performed through adhesion using an adhesivetape or an adhesive or using thermal adhesion in which heat is appliedto an adhesive tape.